Program Schedule
| Time | Description |
|---|---|
| 9:00 to 13:00 | Talks |
| 13:00 to 14:00 | Lunch |
| 14:00 to 15:30 | Talks |
| 15: 30 to 17:00 | Poster Session |
| 17:00 | Evening Talk |
| Sl No | Topic | Speaker |
|---|---|---|
| 1 | Complex network measures and Dynamics of stars from light curves | Prof. G. Ambika |
| 2 | How "cold" are super-thin galaxies? | Arunima Banerjee |
| 3 | Resonances as probes of heavy-ion collisions at the LHC | Chitrasen Jena |
| 4 | Spreading of impacted drops: Pattern formation on powder layers | Dileep Mampallil |
| 5 | The youngest free-floating planets in the solar neighbourhood: Detection, confirmation and properties | Jessy Jose |
| 6 | Transport properties of organic semiconductors | Sasmita Mohakud |
| 7 | Controlling self-similar waves in nonlinera optical waveguides | Thokala Soloman Raju |
| 8 | Topological Phases in Honeycomb Lattice | Sudipta Dutta |
| 9 | Atomic & Molecular Physics with Radiofrequency Ion Traps | Sunil Kumar |
P.S. Anil Kumar*
Department of Physics
Indian Institute of Science
Bangalore 560012
anil@iisc.ac.in
2D materials are becoming building blocks for many new exotic phenomena and devices. Graphene, topological insulators, transition metal dichalcogenides, NbSe2 superconductors etc. are the examples of some of the 2D materials. Topological insulators are materials characterized by an insulating bulk and gapless metallic states on the sample surface. Electrical transport in three dimensional topological insulators occurs through spin- momentum locked topological surface states that enclose an insulating bulk. In the presence of a magnetic field, surface states get quantized into Landau levels giving rise to chiral edge states that are naturally spin-polarized due to spin momentum locking. Robust access to topological surface states has presented itself as a formidable challenge due to inevitable bulk doping that mires the effects arising from the topological surface states. In this lecture, I will demonstrate how to overcome this problem by using bulk-insulating topological insulators featuring surface states that are highly amenable to detection and control using electrostatic gating1-6. Here, for the first time, we study electrostatically defined n-p-n junctions7 of bulk insulating topological insulator BiSbTe1.25Se1.75. I will also demonstrate how these fabrication technologies can be extended to get diverse devises such as edge-contacted topological insulator FETs and topological insulator/superconductor hetero-interfaces8 opening up the possibility of performing advanced spintronics and quantum computing using this new material class.